发明名称 |
Package with UBM and Methods of Forming |
摘要 |
Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes an integrated circuit die, an encapsulant at least laterally encapsulating the integrated circuit die, a redistribution structure on the integrated circuit die and the encapsulant, a connector support metallization coupled to the redistribution structure, and an external connector on the connector support metallization. The redistribution structure includes a dielectric layer disposed distally from the encapsulant and the integrated circuit die. The connector support metallization has a first portion on a surface of the dielectric layer and has a second portion extending in an opening through the dielectric layer. The first portion of the connector support metallization has a sloped sidewall extending in a direction away from the surface of the dielectric layer. |
申请公布号 |
US2016079190(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514605848 |
申请日期 |
2015.01.26 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Hua;Li Chien-Yu;Kuo Hung-Jui;Huang Li-Hsien;Chen Hsien-Wei;Yeh Der-Chyang;Liu Chung-Shi;Jeng Shin-Puu |
分类号 |
H01L23/00;H01L21/56;H01L23/31 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A package structure comprising:
an integrated circuit die; an encapsulant at least laterally encapsulating the integrated circuit die; a redistribution structure on the integrated circuit die and the encapsulant, the redistribution structure comprising a first dielectric layer disposed distally from the encapsulant and the integrated circuit die; a connector support metallization coupled to the redistribution structure, the connector support metallization having a first portion on a first surface of the first dielectric layer and having a second portion extending in an opening through the first dielectric layer, the first portion of the connector support metallization having a sloped sidewall extending in a direction away from the first surface of the first dielectric layer; and an external connector on the connector support metallization. |
地址 |
Hsin-Chu TW |