发明名称 Package with UBM and Methods of Forming
摘要 Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes an integrated circuit die, an encapsulant at least laterally encapsulating the integrated circuit die, a redistribution structure on the integrated circuit die and the encapsulant, a connector support metallization coupled to the redistribution structure, and an external connector on the connector support metallization. The redistribution structure includes a dielectric layer disposed distally from the encapsulant and the integrated circuit die. The connector support metallization has a first portion on a surface of the dielectric layer and has a second portion extending in an opening through the dielectric layer. The first portion of the connector support metallization has a sloped sidewall extending in a direction away from the surface of the dielectric layer.
申请公布号 US2016079190(A1) 申请公布日期 2016.03.17
申请号 US201514605848 申请日期 2015.01.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yu Chen-Hua;Li Chien-Yu;Kuo Hung-Jui;Huang Li-Hsien;Chen Hsien-Wei;Yeh Der-Chyang;Liu Chung-Shi;Jeng Shin-Puu
分类号 H01L23/00;H01L21/56;H01L23/31 主分类号 H01L23/00
代理机构 代理人
主权项 1. A package structure comprising: an integrated circuit die; an encapsulant at least laterally encapsulating the integrated circuit die; a redistribution structure on the integrated circuit die and the encapsulant, the redistribution structure comprising a first dielectric layer disposed distally from the encapsulant and the integrated circuit die; a connector support metallization coupled to the redistribution structure, the connector support metallization having a first portion on a first surface of the first dielectric layer and having a second portion extending in an opening through the first dielectric layer, the first portion of the connector support metallization having a sloped sidewall extending in a direction away from the first surface of the first dielectric layer; and an external connector on the connector support metallization.
地址 Hsin-Chu TW