| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
| 摘要 |
A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench. |
| 申请公布号 |
US2016079067(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514949896 |
申请日期 |
2015.11.24 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chien Chin-Cheng;Wu Chun-Yuan;Liu Chih-Chien;Lin Chin-Fu;Tsai Teng-Chun |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fabricating method of a semiconductor device, comprising:
forming an inter layer dielectric layer on a substrate; forming a trench in the inter layer dielectric layer; forming a high-k dielectric layer having a U-shape profile in the trench; and recessing the high-k dielectric layer to expose an upper portion of the sidewalls of the trench. |
| 地址 |
Hsin-Chu City TW |
