| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a semiconductor region, a first electrode provided on the semiconductor region, a second electrode provided on the semiconductor region adjacent to and spaced from a side of the first electrode, and containing an identical material as the material of the first electrode, a third electrode provided on the semiconductor region in a location between the first electrode and the second electrode, a first insulating film provided between the semiconductor region and the third electrode, and a fourth electrode connected to the third electrode containing the same material as the material of the first electrode and the second electrode. |
| 申请公布号 |
US2016079066(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514632487 |
申请日期 |
2015.02.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKADA Yoshiharu;SHIBATA Takeshi |
| 分类号 |
H01L21/283;H01L29/66;H01L21/28;H01L29/778 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor region; a first electrode provided on the semiconductor region; a second electrode provided on the semiconductor region, adjacent and to the side of the first electrode, and comprising a material identical to the material of the first electrode; a third electrode provided on the semiconductor region, in a location between the first electrode and the second electrode; a first insulating film provided between the semiconductor region and the third electrode; and a fourth electrode connected to the third electrode, and comprising a material identical to the material of the first electrode and the second electrode. |
| 地址 |
Tokyo JP |
