SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, AND NEGATIVE ELECTRODE FORMING METHOD

摘要

The present invention addresses the problem of reducing contact resistance between an n-type gallium nitride compound semiconductor layer and a negative electrode. A semiconductor light emitting element (100) relating to the present invention is provided with: a substrate (1); and a nitride semiconductor layer (20), which is formed on one surface (1a) side of the substrate (1), and which sequentially has, from the one surface (1a) side, an n-type gallium nitride compound semiconductor layer (3), a light emitting layer (4), and a p-type gallium nitride compound semiconductor layer (6). Furthermore, the semiconductor light emitting element (100) is provided with: a positive electrode (8) that is formed on the surface (6a) side of the p-type gallium nitride compound semiconductor layer (6); and a negative electrode (9) that is formed on an exposed surface (3a) of the n-type gallium nitride compound semiconductor layer (3). The negative electrode (9) is configured from a solidification structure having Ni and Al as main components.