| 发明名称 |
MAGNETIC MEMORY DEVICE |
| 摘要 |
Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer. |
| 申请公布号 |
US2016079518(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514816410 |
申请日期 |
2015.08.03 |
| 申请人 |
PI Ung-hwan;KIM Kwang-seok;KIM Kee-won;LEE Sung-chul;JANG Young-man |
发明人 |
PI Ung-hwan;KIM Kwang-seok;KIM Kee-won;LEE Sung-chul;JANG Young-man |
| 分类号 |
H01L43/04;H01L43/08;H01L43/10;H01L43/06 |
主分类号 |
H01L43/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device comprising:
a first magnetization layer; a tunnel barrier disposed on the first magnetization layer; a second magnetization layer disposed on the tunnel barrier; and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer. |
| 地址 |
Hwaseong-si KR |
