| 发明名称 |
PHOTODIODE STRUCTURES |
| 摘要 |
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material. |
| 申请公布号 |
US2016079451(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414483584 |
申请日期 |
2014.09.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ELLIS-MONAGHAN John J.;GAMBINO Jeffrey P.;JAFFE Mark D.;PETERSON Kirk D. |
| 分类号 |
H01L31/0232;H01L31/18;H01L31/103;H01L31/02;H01L31/028 |
主分类号 |
H01L31/0232 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a waveguide structure in a dielectric layer; forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer; and crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material. |
| 地址 |
Armonk NY US |
