主权项 |
1. A semiconductor device comprising:
a semiconductor layer; a gate insulation film disposed on the semiconductor layer; agate electrode, including a first metal compound layer comprising a first metal element also included in the gate insulation film, located on the gate insulation film, a first metal layer, the diffusion coefficient of the metal of the metal layer in gold is smaller than the diffusion coefficient thereof in nickel, and comprising a second metal element also present in the first metal compound layer, located on the first metal compound layer, a gold (Au) layer provided on the first metal layer, a second metal layer provided on the gold layer, and third metal layers provided on side surfaces of the gold layer; a source electrode; a drain electrode; and an interlayer insulation film located over the second metal layer and the third metal layers on the gate electrode. |