SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a semiconductor device includes forming a first electrode on a lower portion of a trench that is formed on a semiconductor layer and having a first insulating film between the first electrode and the semiconductor layer; forming a second insulating film that covers an inner surface of an upper portion of the trench, forming a resist film that extends into the upper portion of the trench on the second insulating film, removing the second insulating film between the resist film and a side wall of the trench to leave a portion of the second insulating film on the first electrode, forming a third insulating film on a side wall of an upper portion of the trench, and forming a second electrode on the first electrode in an inner portion of the second insulating film.

主权项

1. A manufacturing method of a semiconductor device, comprising:
forming a first electrode in a lower portion of a trench that extending inwardly of a semiconductor layer and on a first insulating film disposed between the first electrode and the semiconductor layer; forming a second insulating film on an inner surface of an upper portion of the trench; forming a resist film in the upper portion of the trench and on the second insulating film; removing the second insulating film between the resist film and a side wall of the trench to leave a portion of the second insulating film on the first electrode; forming a third insulating film on a side wall of an upper portion of the trench; and forming a second electrode on the first electrode in an inner portion of the trench and over the second insulating film.