SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided in the first semiconductor region, an element region, and a termination region. The element region includes a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, and a gate electrode disposed on a gate insulating layer that extends adjacent the third semiconductor region and the fourth semiconductor region. The termination region surrounds the element region and includes a first electrode, which includes first portions extending in a first direction and second portions extending in a second direction. A plurality of first electrodes are provided on the first semiconductor region and the second semiconductor region. An interval between adjacent first portions in the second direction is less than an interval between adjacent second portions in the first direction.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a plurality of second semiconductor regions of a second conductivity type extending inwardly of the first semiconductor region, each of the plurality of second semiconductor regions extending in a first direction, and arranged along a second direction crossing the first direction; an element region that includes a third semiconductor region of the second conductivity type that is provided on the second semiconductor regions, a fourth semiconductor region of the first conductivity type that is selectively provided on the third semiconductor region, and a gate electrode disposed on a gate insulating layer that extends adjacent the third semiconductor region and the fourth semiconductor region; and a termination region surrounding the element region and having a plurality of first electrodes that include respective first portions extending in the first direction and second portions extending in the second direction on the first semiconductor region and the second semiconductor region, wherein an interval between adjacent first portions in the second direction is less than an interval between adjacent second portions in the first direction.