INDUCTOR HEAT DISSIPATION IN AN INTEGRATED CIRCUIT

摘要

The present invention relates generally to semiconductor structures and methods of manufacturing and, more particularly, to improving heat dissipation of devices, such as active devices like inductors, by filling portions of the semiconductor structure with thermally conductive and electrical isolating material that may serve as a heat sink to a base substrate. In an embodiment, an inductor may be formed above a cavity region in which the thermally conductive and electrical isolating material has been formed. Heat may then be dissipated from the inductor to the cavity, and eventually to the base substrate, through trenches filled with the thermally conductive and electrical isolating material.

主权项

1. A method comprising:
forming a first dielectric layer on a semiconductor on insulator (SOI) layer of a SOI substrate, the SOI substrate comprising a buried insulator layer located between the SOI layer and a base substrate layer; forming a cavity trench through the first dielectric layer and the SOI layer, the cavity trench exposing the buried insulator layer; forming a cavity in the buried insulator layer; depositing a thermally conductive and electrically isolating material in the cavity; filling the cavity trench with the thermally conductive and electrically isolating material; and forming an inductor above the cavity.