ELECTRONIC DEVICE INCLUDING A DIODE

摘要

An electronic device can include a substrate, lower and upper semiconductor layers over the substrate, and a doped region at the interface between the lower and upper semiconductor layers. The doped region can have a conductivity type opposite that of a dopant within the lower semiconductor layer. Within the lower semiconductor layer, the dopant can have a dopant concentration profile that has a relatively steeper portion adjacent to the substrate, another relatively steeper portion adjacent to an interface between the first and second semiconductor layers, and a relatively flatter portion between the relative steeper portions. A diode lies at a pn junction where a second dopant concentration profile of the first doped region intersects the relatively flatter portion of the first dopant concentration profile. The electronic device can be formed using different processes described herein.

主权项

1. An electronic device comprising:
a substrate having a first dopant with a first conductivity type; a first semiconductor layer over the substrate and including a second dopant of the first conductivity type; a second semiconductor layer over the first semiconductor layer; and a first doped region at an interface of and extending into the first and second semiconductor layers, wherein the first doped region has a third dopant with a second conductivity type opposite the first conductivity type, wherein:
a first dopant concentration profile of the first and second dopants has a first relatively steeper portion adjacent to the substrate, a second relatively steeper portion adjacent to an interface between the first and second semiconductor layers, and a relatively flatter portion between the first and second relative steeper portions; anda first diode is formed at a pn junction where a second dopant concentration profile of the third dopant intersects the relatively flatter portion of the first dopant concentration profile.