SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first semiconductor chip including an inorganic protective film, a second semiconductor chip including an organic protective film and a re-wiring layer, the second semiconductor chip being electrically connected to the first semiconductor chip through a through-silicon via and a bump connection, a third semiconductor chip including an inorganic protective film, the third semiconductor chip being electrically connected to the second semiconductor chip through the re-wiring layer and a bump connection, a first resin layer filled between the first semiconductor chip and the second semiconductor chip, the first resin layer being in contact with the inorganic protective film, and a second resin layer filled between the second semiconductor chip and the third semiconductor chip, the second resin layer being in contact with the organic protective film and the inorganic protective film.

主权项

1. A semiconductor device comprising:
a first semiconductor chip including a first semiconductor substrate having a first surface and a second surface, a first electrode provided below the first surface of the first substrate, and a first inorganic protective film covering at least a part of the first surface of the first substrate while exposing at least a part of the first electrode; a first bump electrode provided on the first electrode; a second semiconductor chip including a second semiconductor substrate having a first surface and a second surface, a via provided to pass through the second semiconductor substrate, the via being electrically connected to the first bump electrode, a second electrode provided below the first surface of the second substrate and electrically connected to the via, and a second inorganic protective film covering at least a part of the first surface of the second substrate while exposing at least a part of the second electrode; a first organic protective film covering at least a part of the second inorganic protective film while exposing at least a part of the second electrode; a re-wiring layer disposed on the first organic protective film, the re-wiring layer being electrically connected to the second electrode; a second bump electrode electrically connected to the re-wiring layer, a third semiconductor chip including a third semiconductor substrate and electrically connected to the second bump electrode, a third inorganic protective film covering the first surface of the third substrate while exposing at least a part of the third electrode; a first resin layer provided between the first semiconductor chip and the second semiconductor chip, the first resin layer being in contact with the first inorganic protective film; and a second resin layer provided between the second semiconductor chip and the third semiconductor chip, the second resin layer being in contact with the third inorganic protective film.