发明名称 MULTI-BAND LOW NOISE AMPLIFIER WITH A SHARED DEGENERATION INDUCTOR
摘要 An apparatus includes a first transistor (302) configured to amplify first signal components within a first frequency band of a radio frequency signal, a second transistor (304) configured to amplify second signal components within a second frequency band of the radio frequency signal, and a third transistor (306) configured to amplify third signal components within a third frequency band of the radio frequency signal. The apparatus also includes a degeneration inductor (310) having a first tapping point, a second tapping point, and a third tapping point. The first tapping point is coupled to the first transistor (302), the second tapping point is coupled to the second transistor (304), and the third tapping point is coupled to the third transistor (306).
申请公布号 WO2016039953(A1) 申请公布日期 2016.03.17
申请号 WO2015US45819 申请日期 2015.08.19
申请人 QUALCOMM INCORPORATED 发明人 RAJENDRAN, GIREESH;KUMAR, RAKESH;SEETHARAM, MANOHAR
分类号 H03F3/193;H03F1/22;H03F1/26;H03F3/195;H03F3/24;H03F3/68;H03F3/72 主分类号 H03F3/193
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