发明名称 |
MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an n-type diffusion layer with less residue derived from a dispersion medium in a specific part of a silicon substrate without forming an unnecessary n-type diffusion layer in a manufacturing process of a solar cell element using the silicon substrate, and to provide a manufacturing method of the solar cell element.SOLUTION: An n-type diffusion layer 12 is formed on a silicon substrate using an n-type diffusion layer formation composition containing glass powder including a donor element and a dispersion medium. Then, ultrasonic cleaning is performed.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016036034(A) |
申请公布日期 |
2016.03.17 |
申请号 |
JP20150189584 |
申请日期 |
2015.09.28 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
SATO TETSUYA;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;ODA AKIHIRO;ADACHI SHUICHIRO |
分类号 |
H01L21/225;H01L31/068;H01L31/18 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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