发明名称 MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an n-type diffusion layer with less residue derived from a dispersion medium in a specific part of a silicon substrate without forming an unnecessary n-type diffusion layer in a manufacturing process of a solar cell element using the silicon substrate, and to provide a manufacturing method of the solar cell element.SOLUTION: An n-type diffusion layer 12 is formed on a silicon substrate using an n-type diffusion layer formation composition containing glass powder including a donor element and a dispersion medium. Then, ultrasonic cleaning is performed.SELECTED DRAWING: Figure 1
申请公布号 JP2016036034(A) 申请公布日期 2016.03.17
申请号 JP20150189584 申请日期 2015.09.28
申请人 HITACHI CHEMICAL CO LTD 发明人 SATO TETSUYA;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;ODA AKIHIRO;ADACHI SHUICHIRO
分类号 H01L21/225;H01L31/068;H01L31/18 主分类号 H01L21/225
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