METHOD AND APPARATUS FOR WRITING DATA TO NON-VOLATILE MEMORY

摘要

Devices and methods implemented therein are disclosed for storing data in memory pages of a non-volatile memory of the storage device. The device comprises a non-volatile memory, a reading circuit, a programming circuit and a read disturb detector. The non-volatile memory has an erased memory page comprising a plurality of multi-layer cells (MLCs). The reading circuit is configured to read a respective electric charge stored in each of the plurality of MLCs. The programming circuit is configured to store data in the plurality of MLCs at either one of a first storage density or a second storage density. The read disturb detector is configured to determine whether the erased memory page is read disturbed and if the erased memory page is read disturbed, cause the programming circuit to store data into the MLCs at the second storage density that is less than the first storage density.

主权项

1. A method for writing data in a memory system having a non-volatile memory, the method comprising:
identifying a memory page in the non-volatile memory that is erased, wherein the memory page comprises a set of memory cells and wherein the memory page is configured to store X times N bits of data where X is a number of memory cells comprising the memory page and where N is an integer number of bits that can be stored in each of the set of memory cells; determining a number of read disturbed memory cells in the memory page, wherein a read disturbed memory cell contains an electric charge between a first and second predetermined threshold; and in response to determining that the number of read disturbed memory cells of the memory page exceeds a threshold number, writing X times M bits of data to the memory page, wherein M is an integer and M0.