发明名称 LEVELERS FOR COPPER DEPOSITION IN MICROELECTRONICS
摘要 A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.
申请公布号 US2016076160(A1) 申请公布日期 2016.03.17
申请号 US201514854561 申请日期 2015.09.15
申请人 ENTHONE INC. 发明人 Whitten Kyle;Paneccasio, JR. Vincent;Richardson Thomas;Rouya Eric
分类号 C25D3/38;C25D7/12 主分类号 C25D3/38
代理机构 代理人
主权项 1. An aqueous electrolytic composition useful in filling submicron features of a semiconductor integrated circuit device or through silicon vias, the composition comprising: an acid; copper ions; and a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent corresponding to the formula: wherein: G is selected from the group consisting of a single covalent bond, —O—, O-((A)r-O)s— and -((A)r-O)s— A has the structure each of p and r is independently an integer between 1 and 6 inclusive, s is an integer between 1 and 10 inclusive, q is an integer between 0 and 6 inclusive; each of R1, R2, R3, R4, R5, R6 and R34 is independently selected from the group consisting of hydrogen and substituted or unsubstituted aliphatic hydrocarbyl comprising 1 to 4 carbon atoms, R33 is substituted or unsubstituted aliphatic hydrocarbyl having 1 to 4 carbon atoms, Y is a leaving group selected from the group consisting of chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, and brosylate, Z is selected from the group consisting of R30 and a leaving group independently selected from the same group as Y, and R30 is selected from the group consisting of aliphatic hydrocarbyl, and when -G- is other than a single covalent bond, q is at least one.
地址 West Haven CT US