NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a stacked body includes electrode layers and first insulating layers alternately stacked. An isolation region extends in the stacked body, the isolation region dividing the stacked body into first regions. First semiconductor members extend in one of the first regions in a stacked direction of the stacked body. A memory film is provided between one of the first semiconductor members and one of the electrode layers. A insulating region extends in the one of the first regions in the stacked direction. A composition of a second region of the one of the electrode layers is different from a composition of a third region of the one of the electrode layers. The second region is in contact with the insulating region, the third region being in contact with the isolation region.

主权项

1. A non-volatile semiconductor memory device, comprising:
a stacked body including a plurality of electrode layers and a plurality of first insulating layers alternately stacked; an isolation region extending in the stacked body, the isolation region dividing the stacked body into a plurality of first regions; a plurality of first semiconductor members extending in one of the first regions in a stacked direction of the stacked body; a memory film provided between one of the first semiconductor members and one of the electrode layers; and an insulating region extending in the one of the first regions in the stacked direction, the insulating region extending from an upper end of the one of the first regions to a lowest first insulating layer of the first insulating layers, a composition of a second region of the one of the electrode layers being different from a composition of a third region of the one of the electrode layers, the second region being in contact with the insulating region, the third region being in contact with the isolation region.