发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer. |
申请公布号 |
US2016079246(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514849651 |
申请日期 |
2015.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Ji Hun;KIM Ilgweon;SONG Junhwa;OH Jeonghoon;YOO WonSeok;LEE Eun-Sun |
分类号 |
H01L27/108;H01L21/311;H01L21/8234;H01L21/308;H01L21/768;H01L49/02;H01L29/06;H01L21/306;H01L21/762;H01L21/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer. |
地址 |
Suwon-si KR |