METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided. The method includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern along side and bottom surfaces of the trench, forming a second metal gate film on the first metal gate film pattern and the insulation film, and forming a second metal gate film pattern positioned on the first metal gate film pattern by removing the second metal gate film to expose at least a portion of the insulation film and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern.

主权项

1. A semiconductor device comprising:
a substrate including a first region and a second region; a first gate structure formed in the first region and including:
a first gate insulation film disposed on the substrate;a first high-k film disposed on the first gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a first trench;a first metal gate film disposed in the first trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the first metal gate film being disposed on the first sidewall of the first high-k film, the second sidewall of the first metal gate film being disposed on the second sidewall of the first high-k film, the bottom layer of the first metal gate film being disposed on the bottom layer of the first high-k film; anda second metal gate film filling the first trench; and a second gate structure formed in the second region and including:
a second gate insulation film disposed on the substrate;a second high-k film disposed on the second gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a second trench;a third metal gate film disposed in the second trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the third metal gate film being disposed on the first sidewall of the second high-k film, the second sidewall of the third metal gate film being disposed on the second sidewall of the second high-k film, the bottom layer of the third metal gate film being disposed on the bottom layer of the second high-k film; anda fourth metal gate film filling the second trench, wherein a height of the second metal gate film is greater than a height of the fourth metal gate film.