| 发明名称 |
PACKAGE WITH UBM AND METHODS OF FORMING |
| 摘要 |
Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes an integrated circuit die, an encapsulant at least laterally encapsulating the integrated circuit die, a redistribution structure on the integrated circuit die and the encapsulant, a connector support metallization coupled to the redistribution structure, a dummy pattern, a second dielectric layer, and an external connector on the connector support metallization. The redistribution structure comprises a first dielectric layer having a first surface disposed distally from the encapsulant and the integrated circuit die. The dummy pattern is on the first surface of the first dielectric layer and around the connector support metallization. The second dielectric layer is on the first surface of the first dielectric layer and on at least a portion of the dummy pattern. The second dielectric layer does not contact the connector support metallization. |
| 申请公布号 |
US2016079191(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514671477 |
申请日期 |
2015.03.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Hsien-Wei;Huang Li-Hsien |
| 分类号 |
H01L23/00;H01L21/56;H01L23/31 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A package structure comprising:
an integrated circuit die; an encapsulant at least laterally encapsulating the integrated circuit die; a redistribution structure on the integrated circuit die and the encapsulant, the redistribution structure comprising a first dielectric layer having a first surface disposed distally from the encapsulant and the integrated circuit die; a connector support metallization coupled to the redistribution structure, the connector support metallization having a first portion on the first surface of the first dielectric layer and having a second portion extending in an opening through the first dielectric layer; a dummy pattern on the first surface of the first dielectric layer and around the connector support metallization; a second dielectric layer on the first surface of the first dielectric layer and on at least a portion of the dummy pattern, the second dielectric layer not contacting the connector support metallization; and an external connector on the connector support metallization. |
| 地址 |
Hsin-Chu TW |
