NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The memory cell array includes a memory string and a select transistor. The memory string includes plural memory cells connected in series, the memory string being formed to extend in a first direction as a lengthwise direction. The select transistor is connected to one end of the memory string. In the wiring section, a conductive layer and an interlayer insulating layer are laminated alternately to form plural layers. The conductive layer functions as a gate electrode of the memory cells and the select transistor. One select transistor includes plural conductive layers, and the plural conductive layers are connected in common by a common first contact. The plurality of the conductive layers and the first contact include a barrier metal formed in a periphery thereof. The plurality of the conductive layers and the first contact are in contact without the barrier metal therebetween at a boundary thereof.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a memory cell array including a memory string and a select transistor, the memory string including a plurality of memory cells connected in series, the memory string being formed to extend in a first direction, and the select transistor being connected to one end of the memory string; and a wiring section in which a conductive layer and an interlayer insulating layer are laminated alternately to form plural layers, one select transistor including the plurality of the conductive layers, and the plurality of the conductive layers are connected in common by a common first contact, the plurality of the conductive layers and the first contact including a barrier metal formed in a periphery thereof, and the plurality of the conductive layers and the first contact being in contact without the barrier metal therebetween at a boundary thereof.