METHOD TO CO-INTEGRATE OPPOSITELY STRAINED SEMICONDUCTOR DEVICES ON A SAME SUBSTRATE

摘要

Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.

主权项

1. A method for forming differently strained regions of semiconductor on a substrate, the method comprising:
forming a first semiconductor layer over a second semiconductor layer, wherein the first semiconductor layer forms under a first strain; implanting ions into a first region and not a second region of the second semiconductor layer, wherein the implanted ions amorphize the first region of the second semiconductor layer; recrystallizing the first region of the second semiconductor layer to form a second strain in the first region; removing the first semiconductor layer; forming a third semiconductor layer in contact with the second region and not in contact with the first region, wherein the third semiconductor layer is of a different chemical composition from the second semiconductor layer; and heating the substrate to condense a chemical component from the third semiconductor layer into the second region of the second semiconductor layer to form a third strain in the second region that is different from the second strain.