Methods for Fabricating Semiconductor Devices Using Liner Layers to Avoid Damage to Underlying Patterns

摘要

A method for fabricating a semiconductor device includes sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening on a substrate including a lower pattern, forming a trench exposing the lower pattern in the interlayer insulating layer using the hard mask pattern, forming a liner layer including a first part formed along sidewalls and a bottom surface of the trench and a second part formed along a top surface of the hard mask pattern, forming a sacrificial pattern exposing the second part of the liner layer in the trench, removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern, and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening therein on a substrate including a lower pattern; forming a trench in the interlayer insulating layer using the hard mask pattern, wherein the trench exposes the lower pattern; forming a liner layer including a first part extending along sidewalls and a bottom surface of the trench and a second part extending along a top surface of the hard mask pattern; forming a sacrificial pattern in the trench, wherein the sacrificial pattern exposes the second part of the liner layer; removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern; and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.