| 发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD |
| 摘要 |
According to an embodiment, a semiconductor manufacturing apparatus includes a chamber, a process tube, a substrate supporting portion, a heater, and a reflection plate. The heater is provided under the substrate supporting portion, and heats the substrates. The reflection plate is provided at a lower side of the heater, and reflects heat emitted from the heater upward. |
| 申请公布号 |
US2016079083(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514608748 |
申请日期 |
2015.01.29 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KUSUNOKI Mari;MIYAZAKI Shinji |
| 分类号 |
H01L21/324;C23C16/458;H01L21/285;C23C16/46;H01L21/67;H01L21/02 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor manufacturing apparatus comprising:
a chamber; a process tube that is provided in the chamber, and into which reactant gas is introduced; a substrate supporting portion that is provided in the process tube, and horizontally supports a plurality of substrates in multilayers; a heater that is provided under the substrate supporting portion, and heats the substrates; and a reflection plate that is provided at a lower side of the heater, and reflects heat emitted from the heater upward. |
| 地址 |
Minato-ku JP |
