METHODS FOR ETCHING A HARDMASK LAYER FOR AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPLICATIONS

摘要

Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.

主权项

1. A method of patterning a hardmask layer disposed on a metal layer formed on a substrate, comprising:
supplying a first etching gas mixture comprising a first carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of the hardmask layer disposed on the metal layer formed on the substrate; subsequently supplying a second etching gas mixture comprising a hydrocarbon gas without the first carbon-fluorine containing gas and the chlorine containing gas from the first etching gas mixture into the processing chamber for a first period of time without applying RF source power or RF bias power to clean the hardmask layer and the substrate disposed in the processing chamber; and subsequently supplying a third etching gas mixture comprising a second carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.