STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL

摘要

A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

主权项

1. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a transient stress in a free ferromagnetic layer of the memory cell by generating a parasitic electric field to activate a piezoelectric material of the memory cell.