发明名称 |
INTEGRATED COMPOSITE PEROVSKITE OXIDE HETEROSTRUCTURE |
摘要 |
An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects. The invention enables miniature highly (voltage) tunable frequency agile devices and/or charge mediated voltage controlled magnetic devices for RF/microwave communications, RADAR, and electronic warfare applications. |
申请公布号 |
US2016076152(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201414488771 |
申请日期 |
2014.09.17 |
申请人 |
U.S. Army Research Laboratory ATTN: RDRL-LOC-I |
发明人 |
Will-Cole Melanie |
分类号 |
C23C28/04;C23C14/34;C23C14/08 |
主分类号 |
C23C28/04 |
代理机构 |
|
代理人 |
|
主权项 |
1. A composite material comprising:
a substrate, a layer of crystallized SrTiO3 perovskite oxide overlying said substrate, a layer doped Ba1-xSrTiO3 perovskite oxide overlying said layer of crystallized SrTiO3, at least one electrode overlying at least a portion of said layer doped Ba1-xSrTiO3 perovskite oxide. |
地址 |
Adelphi MD US |