| 摘要 |
Provided is a data readout circuit capable of, even when a high voltage is applied during data read-out operation, preventing erroneous writing of the data and correctly reading out the data. The data readout circuit comprises: a non-volatile storage element; a latch circuit including an input inverter, an output inverter and a MOS transistor; a first MOS transistor connected between the non-volatile storage element and the latch circuit; a second MOS transistor connected between the latch circuit and the first power supply terminal; a first bias circuit configured to bias a gate of the first MOS transistor; and a second bias circuit configured to bias the MOS transistor in the latch circuit. Each of the first bias circuit and the second bias circuit is configured to output a predetermined bias voltage when the data in the non-volatile storage element is read out. |
