METHOD OF FORMING AN EPITAXIAL SEMICONDUCTOR LAYER IN A RECESS AND A SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

A method of manufacturing a semiconductor device may include: etching a recess in a semiconductor substrate, where the etching produces a metal residue over a surface of the recess. The recess may thereafter be exposed to a cleaning process that causes the metal residue to etch at least one fissure in the semiconductor substrate. The at least one fissure may extend from the surface of the recess into the semiconductor substrate. The method may further include epitaxially forming a liner comprising a first semiconductor material having a first dopant concentration within the recess and over the at least one fissure. The method proceeds with epitaxially forming a semiconductor layer comprising a second semiconductor material having a second dopant concentration over the liner.

主权项

1. A method, comprising:
etching a recess in a semiconductor substrate, the etching producing a metal residue over a surface of the recess; exposing the recess to a cleaning process, the cleaning process causing the metal residue to etch at least one fissure in the semiconductor substrate, the at least one fissure extending from the surface of the recess into the semiconductor substrate; epitaxially forming a liner comprising a first semiconductor material having a first dopant concentration within the recess and over the at least one fissure; and epitaxially forming a semiconductor layer comprising a second semiconductor material having a second dopant concentration over the liner.