Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber

摘要

A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector.

主权项

1. A method for manufacturing a surface machined infrared sensor package, comprising the steps of:
providing a semiconductor substrate having a front side surface and a back side surface; defining a transistor on the substrate front side surface; implanting a reflector on the substrate front side surface; forming a sensor on the substrate front side surface adjacent to the reflector; and depositing a thin-film absorber upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector with the sensor disposed there between.