发明名称 |
PITCH-HALVING INTEGRATED CIRCUIT PROCESS |
摘要 |
A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns. |
申请公布号 |
US2016079249(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514952928 |
申请日期 |
2015.11.26 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
Pratt David Storrs;Housley Richard |
分类号 |
H01L27/108;H01L21/768;H01L21/3213 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
|
主权项 |
1. A pitch-halving integrated circuit (IC) process, comprising:
forming, over a substrate, a plurality of parallel base line patterns each of which is connected with a hammerhead pattern at a first side or a second side of the plurality of base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner; trimming each base line pattern and each hammerhead pattern; forming, on sidewalls of each trimmed base line pattern and the corresponding trimmed hammerhead pattern as a spacer, a pair of derivative line patterns, a loop pattern around the trimmed hammerhead pattern, and a turning pattern at an end of the trimmed base line pattern without the corresponding trimmed hammerhead pattern; removing the trimmed base line patterns and the trimmed hammerhead patterns; and removing a portion of each loop pattern and at least a portion of each turning pattern to disconnect each pair of derivative line patterns, such that each remaining loop pattern includes two contact pad patterns. |
地址 |
Taoyuan City TW |