| 摘要 |
A semiconductor device having, on a front surface of a N-type semiconductor substrate (1) comprising silicon carbide, an N-type semiconductor layer (2), a P-type first semiconductor area (3), an N-type source area (4), a P-type second semiconductor area (5), a gate insulating film (6), a gate electrode (7), and a source electrode (8). The semiconductor device has a P-type third semiconductor area (311) and a source electrode (312), e.g., in a gate pad lower area (305). The semiconductor device has a drain electrode (9) on the rear surface of the semiconductor substrate (1). The third semiconductor area (311) is electrically connected to the source electrodes (8, 312) and either has a higher impurity concentration than the first semiconductor area (3) or is formed deeper than the first semiconductor area (3). As a result of said configuration, the breakdown resistance of the gate insulating film (6) can be improved and the reliability of the gate insulating film (6) can be increased. |
