METHOD FOR MANUFACTURING P-TYPE SiC SINGLE CRYSTAL

摘要

According to an embodiment of the present invention, a manufacturing method is provided with a forming step (S1), a first growing step (S2), a recovery step (S3), and a second growing step (S4). In the forming step (S1), a Si-C solution containing Si, Al, and C is formed in a crucible. In the first growing step (S2), after bringing a SiC seed crystal into contact with the Si-C solution by bringing down a seed shaft, said SiC seed crystal being attached to a lower end of the seed shaft, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. In the recovery step (S3), Al concentration of the Si-C solution is increased after the first growing step (S2). In the second growing step (S4), the Al-doped p-type SiC single crystal is continuously grown after the recovery step (S3).