| 摘要 |
A polishing composition comprising metal oxide particles as abrasive grains, wherein the metal oxide particles include those in which the half-value width of the peak portion at which the diffraction intensity in a powder X‐ray diffraction pattern is largest is less than 1°, and the composition further comprises, as a selectivity control agent, two or more types of water-soluble polymers having different weight-average molecular weights, the ratio of the different weight-average molecular weights of the water-soluble polymers being 10 or more. Accordingly, provided are: a polishing composition that is capable of maintaining a high polishing rate, of preventing occurrences of defects derived from polishing such as scratches, dishing, and erosion, and of allowing the selectivity which is the ratio of polishing speed between a metal layer and insulator layer to be arbitrarily adjusted; and a method for polishing a semiconductor substrate using the composition. |
