发明名称 |
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR RADIO FREQUENCY POWER AMPLIFIERS WITH HIGH LINEARITY ACROSS A WIDE RANGE OF BURST SIGNALS IN WIFI APPLICATIONS |
摘要 |
An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A mirror transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal. |
申请公布号 |
WO2016040688(A2) |
申请公布日期 |
2016.03.17 |
申请号 |
WO2015US49501 |
申请日期 |
2015.09.10 |
申请人 |
RFAXIS, INC. |
发明人 |
GORBACHOV, OLEKSANDR;LI, QIANG;ASHBAUGH, FLOYD;SEYEDI, AYDIN;MUSIOL, LOTHAR;ZHANG, LISETTE L. |
分类号 |
H03F1/02;H03F1/30 |
主分类号 |
H03F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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