发明名称 POWER STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin power storage device and a manufacturing method thereof.SOLUTION: There are provided a power storage device and a manufacturing method of the power storage device. The manufacturing method of the power storage device includes: forming a first layer 102 and a second layer 103 on a first substrate 101; forming a first insulation layer 114, a positive-electrode current collector 104 and a negative-electrode current collector 106 on the second layer 103; forming a positive-electrode active material layer 105 on the positive-electrode current collector 104 and a negative-electrode active material layer 107 on the negative-electrode current collector 106; making the positive-electrode current collector 104 and the positive electrode active material layer 105 be a positive electrode 121; making the negative-electrode current collector 106 and the negative electrode active material layer 107 be a negative electrode 122; forming a solid electrolyte layer 108 on the first insulation layer 114, the positive electrode and the negative electrode; covering the solid electrolyte layer to form a sealing layer 109; forming a flattening film and a support medium on the sealing layer 109; separating the first layer 102 and the second layer 103; bonding the separated second layer 103, positive electrode, negative electrode, solid electrolyte layer 108, sealing layer 109, flattening film, and support medium to a flexible substrate; and removing the support medium from on the flattening film.SELECTED DRAWING: Figure 1
申请公布号 JP2016035921(A) 申请公布日期 2016.03.17
申请号 JP20150154096 申请日期 2015.08.04
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 IZUMI KONAMI
分类号 H01M10/0585;H01G2/06;H01G11/00;H01G11/06;H01G11/08;H01G11/56;H01G11/78;H01G11/84;H01M2/02;H01M4/13;H01M4/139;H01M4/66;H01M10/0562;H01M10/0565 主分类号 H01M10/0585
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