SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor light emitting element includes a first layer, a second layer, an intermediate layer, and a third layer. The first layer has a first surface having roughness including concave portions of which side surfaces are inclined and a second surface on an opposite side to the first surface. The first layer includes a first conductive-type first semiconductor layer. The second layer includes a second conductive-type second semiconductor layer. The intermediate layer is provided between the second surface and the second layer. The third layer is provided in the concave portions.

主权项

1. A semiconductor light emitting element, comprising:
a first layer including at least a first semiconductor layer of a first conductivity-type, the first layer having a first surface that has roughness that includes a plurality of concave portions with sidewall surfaces that are inclined with respect to a layer plane that is parallel to a second surface of the first layer, the first and second surfaces being on opposing sides of the first layer; an intermediate layer adjacent to the second surface; a second layer including a second semiconductor layer of a second conductivity type and adjacent to the intermediate layer, the intermediate layer being between the second surface and the second layer; and a third layer on the sidewall surfaces of the concave portions, the third layer being a crystalline material having a crystal orientation that corresponds to a crystal orientation of the first layer at the sidewall surfaces, wherein a material of the first layer is different from the crystalline material.