Drain Extended CMOS with Counter-Doped Drain Extension

摘要

An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.

主权项

1. A method of fabricating an integrated circuit, comprising the step of:
forming a drift region between a gate and a drain of a DEMOS transistor; wherein at least 10 percent of a length of said drift region between said gate and said drain consists of a concentration of a first dopant type plus a concentration of scattering centers; and wherein said concentration of said scattering centers is greater than said concentration of said first dopant type divided by 5.