| 发明名称 |
SERIES-CONNECTED TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A series-connected transistor structure includes a first source, a first channel-drain structure, a second channel-drain structure, a gate dielectric layer, a gate, a first drain pad and a second drain pad. The first source is over a substrate. The first channel-drain structure is over the first source and includes a first channel and a first drain thereover. The second channel-drain structure is over the first source and substantially parallel to the first channel-drain structure and includes a second channel and a second drain thereover. The gate dielectric layer surrounds the first channel and the second channel. The gate surrounds the gate dielectric layer. The first drain pad is over and in contact with the first drain. The second drain pad is over and in contact with the second drain, in which the first drain pad and the second drain pad are separated from each other. |
| 申请公布号 |
US2016079239(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414485541 |
申请日期 |
2014.09.12 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG Chin-Chi;LEE Chien-Chih;CHIANG Tien-Wei;TSAI Ching-Wei;WANG Chih-Ching;HO Jon-Hsu;HSIEH Wen-Hsing |
| 分类号 |
H01L27/088;H01L29/45;H01L29/06;H01L21/31;H01L29/66;H01L21/283;H01L21/306;H01L21/768;H01L29/78;H01L23/528 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A series-connected transistor structure, comprising:
a first source over a substrate; a first channel-drain structure over the first source, the first channel-drain structure comprising a first channel and a first drain over the first channel; a second channel-drain structure over the first source and substantially parallel to the first channel-drain structure, the second channel-drain structure comprising a second channel and a second drain over the second channel; a gate dielectric layer surrounding the first channel and the second channel; a continuous gate surrounding the gate dielectric layer and between the first channel and the second channel; a first drain pad over and in contact with the first drain; a second drain pad over and in contact with the second drain, wherein the first drain pad and the second drain pad are separated from each other and the first drain pad is series connected to the second drain pad through the first channel-drain structure, the first source and the second channel-drain structure; and two conductive plugs separated from each other and respectively connected to the first drain pad and the second drain pad. |
| 地址 |
Hsinchu TW |
