| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND LEAD FRAME |
| 摘要 |
According to one embodiment, a semiconductor light emitting device includes a lead frame; a chip mounted on the lead frame, the chip including a substrate and a light emitting element provided on the substrate; a wall section including an inner wall facing to a side portion of the chip, and an outer wall on an opposite side to the inner wall; and a phosphor layer provided on at least the chip. A distance between the side portion of the chip and the inner wall of the wall section is smaller than a thickness of the chip. An angle between an upper surface of the lead frame and the inner wall is smaller than an angle between the upper surface of the lead frame and the outer wall. |
| 申请公布号 |
US2016079217(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514838850 |
申请日期 |
2015.08.28 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Egoshi Hidenori;Noguchi Yoshio;Inoue Kazuhiro;Arakawa Takashi;Takeuchi Teruo;Kuroki Toshihiro;Ogushi Masahiro |
| 分类号 |
H01L25/16;H01L33/62;H01L33/58;H01L33/56;H01L33/50;H01L33/48 |
主分类号 |
H01L25/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting device comprising:
a lead frame; a chip mounted on the lead frame, the chip including a substrate and a light emitting element provided on the substrate; a wall section including an inner wall facing to a side portion of the chip, and an outer wall on an opposite side to the inner wall; and a phosphor layer provided on at least the chip, a distance between the side portion of the chip and the inner wall of the wall section being smaller than a thickness of the chip, and an angle between an upper surface of the lead frame and the inner wall being smaller than an angle between the upper surface of the lead frame and the outer wall. |
| 地址 |
Tokyo JP |
