HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM

摘要

The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.

主权项

1. A semiconductor memory system comprising:
a volatile memory; a non-volatile memory including a plurality of sectors, each of the plurality of sectors configured to store one or more data records; and a memory controller coupled to the volatile memory and the non-volatile memory, the memory controller comprising:
a sector management logic circuit configured to:
receive a record address and a read control signal, wherein
the record address identifies a location in the non-volatile memory,compare the record address with a plurality of dead sector addresses, wherein
the dead sector addresses correspond to a set of sectors located in the non-volatile memory, andoutput a memory control signal that is active in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory, wherein
the memory control signal that is active indicates that data located at the record address is invalid.