| 摘要 |
This semiconductor device is provided with: n+ type source regions (21) that are formed on surface layers of p type base regions (10) and p type SiC layers (11), said n+ type source regions being on the side further toward the outside than n type source regions (4) by being in contact with the n type source regions (4), and having an impurity concentration higher than that of the n type source regions (4); an n type region (22) and an n+ type region (12), which are formed deeper than the p type base regions (10) and the p type SiC layers (11), at an n- type SiC layer (2) portion sandwiched between each of the p type base regions (10) and each of the p type SiC layers (11), and which respectively have impurity concentrations that are higher than the impurity concentration of the n- type SiC layer (2); and second n type regions (23) under the p type base regions (10), each of said second n type regions being smaller than each of the p type base regions (10). Consequently, low on-resistance is achieved, accuracy of a threshold voltage Vth is improved, thereby improving qualities and insulation breakdown strength of a gate insulating film, and breakdown strength. |
