SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.

主权项

1. A semiconductor manufacturing method for forming a contact to a semiconductor substrate, the method comprising the steps of:
(a) implanting ions into a region of the semiconductor substrate to form an impurity region; (b) forming a metal layer on said impurity region; and (c) emitting light to said semiconductor substrate on which said metal layer has been formed for one second or less for heating, wherein said step (c) is performed in a forming gas atmosphere containing hydrogen.