| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
| 摘要 |
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held. |
| 申请公布号 |
US2016079056(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514856244 |
申请日期 |
2015.09.16 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HARADA Katsuyoshi;HIROSE Yoshiro;SANO Atsushi |
| 分类号 |
H01L21/02;C23C16/52 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing:
(a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held. |
| 地址 |
Tokyo JP |
