发明名称 INTEGRATED TRANSDUCER PROVIDED WITH A TEMPERATURE SENSOR AND METHOD FOR SENSING A TEMPERATURE OF THE TRANSDUCER
摘要 A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.
申请公布号 US2016076962(A1) 申请公布日期 2016.03.17
申请号 US201514950832 申请日期 2015.11.24
申请人 STMicroelectronics S.r.l. 发明人 Baldo Lorenzo;Vaiana Michele;Chiricosta Mario;Maiore Mario;Rose Paul Georges Marie
分类号 G01L19/00;G01L9/00;G01K7/01 主分类号 G01L19/00
代理机构 代理人
主权项 1. An apparatus, comprising: a membrane formed of a first conductivity type semiconductor material; a sensor element within the membrane formed of a second conductivity type semiconductor material; wherein the sensor element and membrane form a junction diode; a first circuit coupled to the sensor element and configured to sense resistive variation of the sensor element in response to deflection of the membrane; and a second circuit coupled to the junction diode and configured to sense a voltage across the junction diode in response to application of a current, said sensed voltage indicative of a temperature of the junction diode.
地址 Agrate Brianza IT