PHASE CHANGE MATERIAL AND PHASE CHANGE RANDOM ACCESS MEMORY INCLUDING LAYER OF THE PHASE CHANGE MATERIAL

摘要

According to an embodiment of the present invention, provided is a phase change material for a phase change random access memory. The phase change material is composed of Ge_10 Sb_90 Sez, wherein the sum of compositions of Ge, Sb and Se is 100 atomic%, and a relative content ratio of Ge:Sb:Se is 10:90:z.