DECOUPLING STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

Provided is an integrated circuit device. The integrated circuit device includes a decoupling structure including a first capacitor and a second capacitor different from the first capacitor. The decoupling structure includes: a plurality of first conductive patterns individually extended in a vertical direction; second conductive patterns individually extended in the vertical direction; an integrated support structure which supports the first conductive patterns and the second conductive patterns structurally, and is extended in a horizontal direction; and a common electrode which is provided among the first conductive patterns and among the second conductive patterns. The first conductive patterns and the common electrode include electrodes of the first capacitors, and the second conductive patterns and the common electrode include electrodes of the second capacitors. The decoupling structure can reduce the size of the semiconductor device.