| 摘要 |
The present invention relates to a method for producing a semiconductor device, a substrate processing apparatus, and a program. More specifically, the purpose of the present invention is to provide a technology enabling formation of a film which has etching resistance and favorable surface roughness. The method of the present invention comprises a process to form a lamination film configured as a first film and a second film are laminated on a substrate, by carrying out a certain number of cycles including the following processes: forming the first film containing at least certain atoms and oxygen; and forming the second film containing at least certain atoms, oxygen, and carbon. |
