| 摘要 |
The present invention is directed to a method of producing a bonded wafer including a thin film on a base wafer, including: implanting at least one gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer from a surface of the bond wafer to form a layer of the implanted ion; bonding the surface from which the ion is implanted into the bond wafer and a surface of the base wafer directly or through an insulator film; and then performing a heat treatment to separate part of the bond wafer along the layer of the implanted ion, wherein before the bond wafer and the base wafer are bonded, a thickness of the bond wafer and the base wafer is measured, and a combination of the bond wafer and the base wafer is selected such that a difference in the thickness between the wafers is less than 5 µm, and the selected bond and base wafers are bonded. This method can inhibit the variation in thickness in a marble pattern that occurs in a thin film and produce a bonded wafer including the thin film with uniform thickness. |
