| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device by a method of forming an oxygen-excess oxide semiconductor with good reproducibility, and a device configuration where hydrogen or water is not mixed in the oxide semiconductor device from the outside as much as possible. <P>SOLUTION: In the method of manufacturing a transistor including an oxide semiconductor, the percentage of oxygen flow rate to the total flow rate of sputtering gas is set to 90%-100%, an oxide semiconductor layer is formed in oxygen-excess state by sputtering a metal oxide, and the oxide semiconductor layer is sealed in a dense metal oxide thus obtaining a device configuration where impurities such as hydrogen or water is not mixed as much as possible. <P>COPYRIGHT: (C)2012,JPO&INPIT |
